mos field effect transistor description the 2sk2363/2sK2364 is n-channel mos field effect transistor designed for high voltage switching applications. features ? low on-resistance 2sk2363: r ds (on) = 0.5 w (v gs = 10 v, i d = 4.0 a) 2sK2364: r ds (on) = 0.6 w (v gs = 10 v, i d = 4.0 a) ? low c iss c iss = 1600 pf typ. ? high avalanche capability ratings ? isolate to-220 package absolute maximum ratings (t a = 25 ?c) drain to source voltage (2sk2363/2sK2364) v dss 450/500 v gate to source voltage v gss 30 v drain current (dc) i d(dc) 8.0 a drain current (pulse) * i d(pulse) 32 a total power dissipation (t c = 25 ?c) p t1 35 w total power dissipation (t a = 25 ?c) p t2 2.0 w channel temperature t ch 150 ?c storage temperature t stg C55 to +150 ?c single avalanche current ** i as 8.0 a single avalanche energy ** e as 320 mj * pw 10 m s, duty cycle 1 % ** starting t ch = 25 ?c, r g = 25 w , v gs = 20 v ? 0 2sk2363/2sK2364 switching n-channel power mos fet industrial use 1994 data sheet document no. tc-2504a (o. d. no. tc-8063a) date published may 1995 p printed in japan 10.0?.3 4.5?.2 3.2?.2 2.7?.2 2.5?.1 1.3?.2 1.5?.2 2.54 0.7?.1 2.54 0.65?.1 123 3?.1 4?.2 15.0?.3 12.0?.2 13.5min. 1. gate 2. drain 3. source mp-45f (isolated to-220) body diode source drain gate package dimensions (in millimeter)
2sk2363/2sK2364 2 electrical characteristics (t a = 25 ?c) characteristic symbol min. typ. max. test conditions drain to source on-resistance r ds (on) 0.4 0.5 v gs = 10 v 2sk2363 0.5 0.6 i d = 4.0 a 2sK2364 gate to source cutoff voltage v gs (off) 2.5 3.5 v ds = 10 v, i d = 1 ma forward transfer admittance | y fs | 4.0 v ds = 10 v, i d = 4.0 a drain leakage current i dss 100 v ds = v dss , v gs = 0 gate to source leakage current i gss 100 v gs = 30 v, v ds = 0 input capacitance c iss 1600 v ds = 10 v output capacitance c oss 310 v gs = 0 reverse transfer capacitance c rss 30 f = 1 mhz turn-on delay time t d (on) 20 i d = 4.0 a rise time t r 13 v gs = 10 v turn-off delay time t d (off) 83 v dd = 150 v fall time t f 16 r g = 10 w r l = 37.5 w total gate charge q g 42 i d = 8 a gate to source charge q gs 10 v dd = 400 v gate to drain charge q gd 20 v gs = 10 v body diode forward voltage v f (s-d) 1.0 i f = 8 a, v gs = 0 reverse recovery time t rr 350 i f = 8 a, v gs = 0 reverse recovery charge q rr 1.5 di/dt = 50 a/ m s unit w w v s m a na pf pf pf ns ns ns ns nc nc nc v ns m c the application circuits and their parameters are for references only and are not intended for use in actual design-in's. test circuit 3 gate charge v gs = 20 - 0 v pg r g = 25 w 50 w d.u.t. l v dd test circuit 1 avalanche capability pg. r g = 10 w d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 w d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 t = 1us duty cycle 1 % v gs wave form i d wave form v gs i d 10 % 10 % 0 0 90 % 90 % 90 % 10 % v gs (on) i d t on t off t d (on) t r t d (off) t f t
2sk2363/2sK2364 3 typical characteristics (t a = 25 ?c) derating factor of forward bias safe operating area 20 140 160 100 t c - case temperature - ?c dt - percentage of rated power - % drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a forward bias safe operating area 10 100 1 000 100 v ds - drain to source voltage - v i d - drain current - a 416 812 20 80 0 40 1.0 10 0.1 60 20 60 40 80 100 120 total power dissipation vs. case temperature 20 140 160 50 t c - case temperature - ?c p t - total power dissipation - w 40 0 20 30 10 60 40 80 100 120 drain current vs. gate to source voltage 51015 100 v gs - gate to source voltage - v i d - drain current - a 1 10 0.1 16 12 8 4 0 pulsed v gs = 20 v 10 v 8 v 6 v 1 t c = 25 ?c single pulse 100 s 1 ms 10 ms 100 ms pw = 10 s power dissipation limited r ds (on) limited (at v gs = 10 v) i d (pulse) 0 pulsed t a = 125 ?c 75 ?c 25 ?c ?5 ?c i d (dc) m m 24
2sk2363/2sK2364 4 drain to source on-state resistance vs. gate to source voltage transient thermal resistance vs. pulse width pw - pulse width - s r th (ch-c) (t) - transient thermal resistance - c/w 1 000 100 10 1 0.1 0.01 0.001 10u 100 u 1 m 10 m 100 m 1 10 100 1 000 t c = 25 ?c single pulse r th (ch-a) = 62.5 ?c/w r th (ch-c) = 3.75 ?c/w v ds = 10 v pulsed forward transfer admittance vs. drain current 1.0 10 100 100 i d - drain current - a | yfs | - forward transfer admittance - s t a = ?5 ?c 25 ?c 75 ?c 125 ?c 10 20 30 1.5 v gs - gate to source voltage - v r ds (on) - drain to source on-state resistance - w gate to source cutoff voltage vs. channel temperature t ch - channel temperature - c v gs (off) - gate to source cutoff voltage - v drain to source on-state resistance vs. drain current 1.0 10 100 i d - drain current - a r ds (on) - drain to source on-state resistance - w pulsed i d = 10 a 5 a 2.5 a ?0 0 50 100 150 4.0 3.0 2.0 1.0 0 10 0.1 1.0 1.0 0.5 0 1.0 2.0 0 pulsed v gs = 10 v
2sk2363/2sK2364 5 drain to source on-state resistance vs. channel temperature q g - gate char g e - nc v ds - drain to source voltage - v 0 10203040 400 300 200 100 t ch - channel temperature - c r ds (on) - drain to source on-state resistance - w ?0 0 50 100 150 1.5 1.0 0.5 0 reverse recovery time vs. drain current 1.0 10 100 i d - drain current - a t rr - reverse recovery time - ns 1 000 0.1 100 dynamic input/output characteristics v gs - gate to source voltage - v 16 14 12 10 8 6 4 2 i d = 10 a v dd = 400 v 250 v 125 v v gs v ds di/dt = 50 a/us v gs = 0 source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a 1.5 100 10 1.0 0.1 1.0 0.5 0 pulsed v gs = 10 v v gs = 0 capacitance vs. drain to source voltage 10 100 1 000 10 000 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 1 000 100 10 1 v gs = 0 f = 1 mhz c iss c oss c rss 1.0 10 100 1 000 i d - drain current - a t d (on) , t r , t d (of) , t f - switching time - ns 100 0.1 10 1.0 v ds = 150 v v gs = 10 v r g = 10 w switching characteristics t r t f t d (on) t d (off) v gs = 10 v i d = 10 a 5 a
2sk2363/2sK2364 6 1.0 m 10 m 100 m l - inductive load - h i as - single avalanche current - a 10 1.0 single avalanche current vs. inductive load r g = 25 w v dd = 150 v v gs = 20 v ? 0 starting t ch = 25 ?c i as = 8 a e as = 320 mj startin g tch-startin g channel tem p erature - ?c e as - single avalanche energy - mj 25 50 75 125 150 100 single avalanche energy vs. starting channel temperature 400 300 200 100 0 320 mj i d (peak) = i as r g = 25 w v gs = 20 v ? 0 v v dd = 150 v 100 m
2sk2363/2sK2364 7 reference document name document no. nec semiconductor device reliability/quality control system. tei-1202 quality grade on nec semiconductor devices. iei-1209 semiconductor device mounting technology manual. iei-1207 semiconductor device package manual. iei-1213 guide to quality assurance for semiconductor devices. mei-1202 semiconductor selection guide. mf-1134 power mos fet features and application switching power supply. tea-1034 application circuits using power mos fet. tea-1035 safe operating area of power mos fet. tea-1037 the diode connected between the gate and source of the transistor serves as a protector against esd. when this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2sk2363/2sK2364 [memo] no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: standard, special, and specific. the specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard : computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special : transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific : aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in standard unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11
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